Course Hand Out
|
Course Code |
Course Title |
L |
T |
P |
U |
|
PHY 652 T |
Physics of Semiconductor Devices |
3 |
1 |
0 |
4 |
Scope and Objective of the course: Semiconductor devices are part and parcel of our day to day life and this industry is one of the fastest growing industries. Skilled and trained device physicists are highly in demand in industry and research institutions. This course is designed to develop among the students the proper understanding of the physics behind the semiconductor devices.
Text Books:
1. Physics
of semiconductor Devices
S.M. Sze
2. Solid
state electronic Devices
Ben G. Streetman
References :
1. NPTEL lectures
Lecture wise plan
Topics to be covered Number of lectures
|
Evolution and uniqueness of Semiconductor Technology |
1 |
|
Equilibrium carrier concentration, Thermal Equilibrium and wave particle duality ,Intrinsic semiconductor Bond and band models ,Extrinsic semiconductor Bond and band models |
5 |
|
Carrier transport, Random motion, Drift and diffusion |
2 |
|
Excess carriers, Injection level, Lifetime, Direct and indirect semiconductors |
2 |
|
Procedure for analyzing semiconductor devices, Basic equations and approximations |
1 |
|
P-N Junction, Device structure and fabrication, Equilibrium picture, DC forward and reverse characteristics, Small-signal equivalent circuit, Switching characteristics, Solar cell |
6 |
|
P-N Junction, Device structure and fabrication, Equilibrium picture, DC forward and reverse characteristics, Small-signal equivalent circuit, Switching characteristics, Solar cell |
6 |
|
Bipolar Junction Transistor, History, Device structures and fabrication, Transistor action and amplification, Common emitter DC characteristics, Small-signal Equivalent circuit SPICE model |
6 |
|
MOS Junction, C-V characteristics, threshold voltage, body effect |
3 |
|
Metal Oxide Field Effect Transistor, History, Device structures and fabrication, Common source DC characteristics, Small-signal equivalent circuit SPICE level-1 model, Differences between a MOSFET and a BJT |
6 |
|
Junction FET and MESFET |
2 |
|
Recent Developments, Heterojunction FET, Hetrojunction bipolar transistor |
2 |
|
Summary |
1 |
|
Total number of lectures |
43 |
Evaluation Scheme:
|
Component |
Duration |
Weightage (%) |
Remarks |
|
Pre- midterm Quizes |
25 |
Closed Book |
|
|
Mid Term Exam |
2 hrs. |
20 |
Closed Book |
|
Post midterm Quizes |
25 |
Closed Book |
|
|
Comprehensive Exam |
3 hrs. |
30 |
Closed Book |
1. Attendance Policy: A Student must normally maintain a minimum of 75% attendance in the course without which he/she shall be disqualified from appearing in the respective examination.
2. Make-up Policy: A student, who misses any component of evaluation for genuine reasons, must immediately approach the instructor with a request for make-up examination stating reasons. The decision of the instructor in all matters of make-up shall be final.
3. Chamber Consultation Hours: During the Chamber Consultation Hours, the student can consult the respective faculty in his/her chamber without prior appointment
- Teacher: Camelia Das